STS4DPF20L
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Краткое описание:
20V P-Ch MOSFET, 4A, 80mR RdsOn, SOIC, STripFET
Дополнительная информация
Dual P-Channel MOSFET, 20V Drain-Source Breakdown Voltage, 80mΩ Max Drain-Source On-Resistance, 4A Continuous Drain Current. Features 1.6W Max Power Dissipation, 1.35nF Input Capacitance, and 1.6V Threshold Voltage. Surface mountable in an SOIC package, this RoHS compliant component offers fast switching with 25ns Turn-On Delay and 35ns Fall Time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.25mm |
| Length | 5mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 80mR |
| Package/Case | SOIC |
| Current Rating | -4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 2500 |
| Input Capacitance | 1.35nF |
| Power Dissipation | 2W |
| Threshold Voltage | 1.6V |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 125ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 80mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 80mR |
| Drain to Source Breakdown Voltage | 20V |
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