STS4DPF30L
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Краткое описание:
P-CH MOSFET, 30V, 80mR, 4A, SOIC, Dual
Дополнительная информация
P-CHANNEL MOSFET, SOIC package, featuring 30V drain-source breakdown voltage and 80mΩ drain-source on-resistance. Delivers 4A continuous drain current with a 2W power dissipation. Operates from -55°C to 150°C, with 25ns turn-on and 125ns turn-off delay times. Surface mountable with a 1.35nF input capacitance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.25mm |
| Length | 5mm |
| Series | STripFET™ |
| Polarity | P-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 80mR |
| Package/Case | SOIC |
| Current Rating | -4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 2500 |
| Input Capacitance | 1.35nF |
| Power Dissipation | 2W |
| Threshold Voltage | 1V |
| Number of Elements | 2 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 125ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 80mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 80mR |
| Drain to Source Breakdown Voltage | -30V |
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