STS5N15F4
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Краткое описание:
N-Ch MOSFET 150V 5A 63mR SOIC Power
Дополнительная информация
N-channel power MOSFET featuring 150V drain-source breakdown voltage and 5A continuous drain current. Offers a low 63mΩ maximum drain-source on-resistance. Designed for surface mount applications in an SOIC package, this component boasts fast switching speeds with a 13.5ns turn-on delay and 11.4ns fall time. Operating temperature range spans -55°C to 150°C with a maximum power dissipation of 2.5W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | DeepGATE™, STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 11.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 63mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.71nF |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Turn-On Delay Time | 13.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 39.7ns |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 63mR |
| Drain to Source Breakdown Voltage | 150V |
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