STS5NF60L
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Краткое описание:
60V 5A N-CH MOSFET, 45mR RdsOn, SOIC
Дополнительная информация
N-Channel MOSFET featuring 60V drain-source breakdown voltage and 5A continuous drain current. This surface-mount device offers a low 45mΩ drain-source on-resistance and a maximum power dissipation of 2.5W. Operating across a temperature range of -55°C to 150°C, it boasts fast switching characteristics with a 13ns turn-on delay and 10ns fall time. The SOIC package is RoHS compliant and suitable for tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.65mm |
| Length | 5mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 55mR |
| Package/Case | SOIC |
| Current Rating | 5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 1.25nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 1.7V |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 55mR |
| Gate to Source Voltage (Vgs) | 15V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 45mR |
| Drain to Source Breakdown Voltage | 60V |
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