STS6NF20V
Производится
Увеличить
Краткое описание:
N-Ch MOSFET 20V 6A 30mR SOIC Surface Mount
Дополнительная информация
N-channel Power MOSFET featuring 20V drain-source breakdown voltage and 6A continuous drain current. Offers low 30mΩ typical drain-to-source resistance at 2.7V gate drive. Surface mountable in an SOIC package with dimensions of 5mm length, 4mm width, and 1.25mm height. Operates from -55°C to 150°C with a maximum power dissipation of 2.5W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.25mm |
| Length | 5mm |
| Series | STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 40mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 460pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 600mV |
| Number of Elements | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | 20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
