STS7PF30L
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Краткое описание:
P-Channel MOSFET -30V, 7A, 21mR, SO-8
Дополнительная информация
P-channel MOSFET featuring -30V drain-source breakdown voltage and a low 0.016 Ohm typical drain-source on-resistance. This power MOSFET offers a continuous drain current of 7A and a maximum power dissipation of 2.5W. Designed for surface mounting, it is housed in a compact SO-8 package with dimensions of 5mm length, 4mm width, and 1.25mm height. Key electrical characteristics include a 2.6nF input capacitance, 23ns fall time, and 65ns turn-off delay. The component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.25mm |
| Length | 5mm |
| Series | STripFET™ |
| Current | 7A |
| Voltage | 30V |
| Polarity | P-CHANNEL |
| Fall Time | 23ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 21mR |
| Package/Case | SO |
| Current Rating | -7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 1 |
| Input Capacitance | 2.6nF |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Turn-On Delay Time | 68ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 65ns |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 21mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 21mR |
| Drain to Source Breakdown Voltage | -30V |
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