STS8DNF3LL
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Краткое описание:
Dual N-Ch MOSFET 30V 8A SO-8 20mR
Дополнительная информация
Dual N-channel MOSFET, 30V Drain-Source Breakdown Voltage, featuring 8A continuous drain current and a low 0.017 Ohm typical drain-source on-resistance. This power MOSFET, part of the STripFET™ II series, is housed in a surface-mount SO-8 package. It offers fast switching characteristics with turn-on delay time of 18ns and fall time of 11ns. Designed for efficiency, it supports a maximum power dissipation of 2W and operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ II |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Package/Case | SO |
| Current Rating | 8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 2500 |
| Input Capacitance | 800pF |
| Power Dissipation | 2W |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 20mR |
| Drain to Source Breakdown Voltage | 30V |
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