STS9D8NH3LL
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Краткое описание:
Dual N-Ch MOSFET, 30V, 9A, 22mR, SO-8
Дополнительная информация
Dual N-channel MOSFET, 30V drain-source breakdown voltage, 9A continuous drain current, and 22mΩ maximum drain-source on-resistance. Features include 8.5ns fall time and 18ns turn-off delay time, with 857pF input capacitance. This surface-mount component operates from -55°C to 150°C and has a maximum power dissipation of 2W. Packaged in SO format on tape and reel.
| RoHS | Not CompliantNo |
| Mount | Surface Mount |
| Series | STripFET™ |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 8.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 22mR |
| Package/Case | SO |
| RoHS Compliant | No |
| Package Quantity | 2500 |
| Input Capacitance | 857pF |
| Power Dissipation | 2W |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 22MR |
| Drain to Source Breakdown Voltage | 30V |
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