STSJ50NH3LL

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STSJ50NH3LL - Stmicroelectronics
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Краткое описание: 50A, 30V, 8mR N-CH Power MOSFET, SOIC, SM
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-CHANNEL Power MOSFET, SOIC package, featuring 30V Drain to Source Breakdown Voltage and 50A Continuous Drain Current. Offers low 8mR Drain to Source Resistance and 10.5mR Rds On Max. Designed for surface mount applications with a maximum power dissipation of 50W and operating temperature range of -55°C to 150°C. Includes fast switching characteristics with 15ns Turn-On Delay Time and 8.5ns Fall Time.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.65mm
Length 5mm
Series STripFET™
Polarity N-CHANNEL
Fall Time 8.5ns
Lead Free Lead Free
Packaging Cut Tape
Rds On Max 10.5mR
Package/Case SOIC
Current Rating 50A
RoHS Compliant Yes
DC Rated Voltage 30V
Package Quantity 1
Input Capacitance 965pF
Power Dissipation 50W
Turn-On Delay Time 15ns
Turn-Off Delay Time 18ns
Max Power Dissipation 50W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 8mR
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 50A
Drain to Source Voltage (Vdss) 30V
Drain to Source Breakdown Voltage 30V

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