STT13005-K

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STT13005-K - Stmicroelectronics
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Краткое описание: NPN BJT Transistor 400V 2A TO-126 SOT-32
Производитель Stmicroelectronics
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for through-hole mounting. Features a maximum collector-emitter voltage of 400V and a continuous collector current of 2A. Offers a maximum power dissipation of 45000mW and a minimum DC current gain of 10 at 0.5A/5V, increasing to 8 at 2A/5V. Housed in a plastic SOT-32 package with 3 pins and a tab, measuring 7.8mm (L) x 2.9mm (W) x 11.05mm (H) with a 2.29mm pin pitch. Operates within a temperature range of -65°C to 150°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes with Exemption
Category Bipolar Power
Mounting Through Hole
Cage Code SCR76
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case SOT-32
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.29
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 2.9(Max)
Package Family Name TO-126
Package Height (mm) 11.05(Max)
Package Length (mm) 7.8(Max)
Radiation Hardening No
Minimum DC Current Gain [email protected]@5V|8@2A@5V
Max Operating Temperature 150°C
Maximum Power Dissipation 45000mW
Min Operating Temperature -65°C
Number of Elements per Chip 1
Maximum DC Collector Current 2A
Maximum Emitter Base Voltage 9V
Maximum Collector-Emitter Voltage 400V

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