STT13005D-K

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STT13005D-K - Stmicroelectronics
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Краткое описание: NPN BJT 400V 2A TO-126 Transistor
Производитель Stmicroelectronics
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN bipolar junction transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 400V and a maximum DC collector current of 2A. This single-element transistor is housed in a 3-pin SOT-32 (TO-126) plastic package with through-hole mounting. It offers a maximum power dissipation of 45000mW and operates within a temperature range of -65°C to 150°C. Minimum DC current gain is 10 at 0.5A/5V and 8 at 2A/5V.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes with Exemption
Category Bipolar Power
Mounting Through Hole
Cage Code SCR76
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case SOT-32
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.2
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 2.7(Max)
Package Description Small-Outline Transistor
Package Family Name TO-126
Package Height (mm) 10.8(Max)
Package Length (mm) 7.8(Max)
Radiation Hardening No
Minimum DC Current Gain [email protected]@5V|8@2A@5V
Max Operating Temperature 150°C
Maximum Power Dissipation 45000mW
Min Operating Temperature -65°C
Number of Elements per Chip 1
Maximum DC Collector Current 2A
Maximum Emitter Base Voltage 9V
Maximum Collector-Emitter Voltage 400V

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