STU12N65M5
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Краткое описание:
650V 8.5A N-CH Power MOSFET TO-251
Дополнительная информация
N-channel power MOSFET featuring 650V drain-source breakdown voltage and 8.5A continuous drain current. This through-hole component offers a low 430mΩ drain-source on-resistance and a maximum power dissipation of 70W. Designed for demanding applications, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-251 (IPAK-3) package. Key switching characteristics include a 15.6ns fall time and 22.6ns turn-on delay time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Fall Time | 15.6ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 430mR |
| Package/Case | TO-251 |
| RoHS Compliant | Yes |
| Input Capacitance | 900pF |
| Power Dissipation | 70W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 22.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15.6ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 430mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 430MR |
| Drain to Source Breakdown Voltage | 650V |
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