STU1HN60K3
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Краткое описание:
600V N-CH MOSFET, 1.2A, 6.7 Ohm, IPAK, Through Hole
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 1.2A continuous drain current. This SuperMESH3™ device offers a typical Rds(on) of 6.4 Ohms and a maximum of 8 Ohms. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 27W. The IPAK package (TO-251-3) facilitates through-hole mounting. Key switching characteristics include a 7ns turn-on delay, 23ns turn-off delay, and 31ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.2mm |
| Length | 6.6mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 31ns |
| Packaging | Rail/Tube |
| Rds On Max | 8R |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 140pF |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Max Power Dissipation | 27W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.7R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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