STU2N62K3
Производится
Увеличить
Краткое описание:
N-Ch MOSFET, 620V, 3.6R, 2.2A, IPAK, Through Hole
Дополнительная информация
N-channel Power MOSFET featuring 620V drain-source breakdown voltage and 2.2A continuous drain current. This SuperMESH3™ device offers a low 3.6 Ohm drain-source on-resistance and is housed in a TO-251-3 IPAK package for through-hole mounting. Key electrical characteristics include a 3.75V threshold voltage, 340pF input capacitance, and fast switching times with 8ns turn-on delay and 21ns turn-off delay. Maximum power dissipation is 45W, with operating temperatures ranging from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.9mm |
| Length | 6.6mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 3.6R |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 340pF |
| Power Dissipation | 45W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.6R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Voltage (Vdss) | 620V |
| Drain-source On Resistance-Max | 3.6R |
| Drain to Source Breakdown Voltage | 620V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
