STU3LN62K3

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STU3LN62K3 - Stmicroelectronics
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Краткое описание: N-Ch 620V 2.5A 3R Power MOSFET IPAK TO-251
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (END OF LIFE)

Дополнительная информация

N-channel SuperMESH3™ Power MOSFET in TO-251-3 package. Features 620V drain-source breakdown voltage, 2.5A continuous drain current, and 3 Ohm maximum drain-source on-resistance. Offers fast switching with 9ns turn-on delay and 27ns fall time. Operates from -55°C to 150°C with 45W maximum power dissipation. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 2.4mm
Height 6.9mm
Length 6.6mm
Series SuperMESH3™
Polarity N-CHANNEL
Fall Time 27ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 3R
Package/Case TO-251-3
RoHS Compliant Yes
Package Quantity 75
Input Capacitance 386pF
Power Dissipation 45W
Threshold Voltage 3.75V
Turn-On Delay Time 9ns
Radiation Hardening No
Turn-Off Delay Time 30ns
Reach SVHC Compliant No
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.5A
Drain to Source Voltage (Vdss) 620V
Drain-source On Resistance-Max 3R
Drain to Source Breakdown Voltage 620V

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