STU3N80K5
Производится
Краткое описание:
800V N-CH MOSFET, 2.5A, 3.5 Ohm, IPAK
Дополнительная информация
N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 2.5A continuous drain current. This device offers a typical Rds(on) of 2.8 Ohms and a maximum of 3.5 Ohms, with a maximum power dissipation of 60W. Designed for through-hole mounting in an IPAK package (TO-251-3), it operates within a temperature range of -55°C to 150°C and boasts fast switching characteristics with turn-on delay of 8.5ns and fall time of 25ns. The component is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.2mm |
| Length | 6.6mm |
| Series | SuperMESH5™ |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 3.5R |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 130pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8.5ns |
| Turn-Off Delay Time | 20.5ns |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
