STU5N52K3
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Краткое описание:
525V 4.4A N-CH MOSFET, 1.5 Ohm, IPAK, Through Hole
Дополнительная информация
N-channel Power MOSFET featuring 525V drain-to-source breakdown voltage and 1.5 Ohm typical drain-to-source resistance. This SuperMESH3™ device offers a continuous drain current of 4.4A and a maximum power dissipation of 70W. Packaged in a TO-251-3 (IPAK) for through-hole mounting, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 9ns turn-on delay and a 16ns fall time, with an input capacitance of 545pF. This component is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.9mm |
| Length | 6.6mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.5R |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 545pF |
| Power Dissipation | 70W |
| Number of Elements | 1 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 29ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Voltage (Vdss) | 525V |
| Drain to Source Breakdown Voltage | 525V |
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