STU5N60M2
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Краткое описание:
600V N-Channel MOSFET, 1.4R Rds(on), 3.7A ID, IPAK
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source voltage and 1.4 Ohm typical drain-source resistance. This device offers a continuous drain current of 3.7A and a maximum power dissipation of 45W. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 650V breakdown voltage and 165pF input capacitance.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.2mm |
| Length | 6.6mm |
| Series | MDmesh™ II Plus |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.4R |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 165pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 11.8ns |
| Turn-Off Delay Time | 70ns |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.4R |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 650V |
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