STU7N80K5
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Краткое описание:
800V 6A N-CH MOSFET, 0.95 Ohm, IPAK, TO-251
Дополнительная информация
N-channel Power MOSFET featuring 800V drain-to-source breakdown voltage and 6A continuous drain current. Offers 950mΩ typical drain-to-source resistance at 6A, 15V, 100°C. Housed in a TO-251-3 IPAK package for through-hole mounting, this component operates from -55°C to 150°C with a maximum power dissipation of 110W. Key switching parameters include a 11.3ns turn-on delay, 20.2ns fall time, and 23.7ns turn-off delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.2mm |
| Length | 6.6mm |
| Series | SuperMESH5™ |
| Polarity | N-CHANNEL |
| Fall Time | 20.2ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.2R |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 360pF |
| Power Dissipation | 110W |
| Turn-On Delay Time | 11.3ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23.7ns |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 950mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
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