STW120NF10

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STW120NF10 - Stmicroelectronics
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Краткое описание: 100V 110A N-CH MOSFET TO-247 9mR Power Transistor
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 100V drain-source breakdown voltage and a low 9mΩ drain-source on-resistance. This device offers a continuous drain current of 110A and a maximum power dissipation of 312W, housed in a TO-247 package for through-hole mounting. Key performance characteristics include a 4V threshold voltage, 25ns turn-on delay, and 68ns fall time, operating within a temperature range of -55°C to 175°C. This RoHS compliant component is designed for high-power applications.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series STripFET™ II
Polarity N-CHANNEL
Fall Time 68ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 10.5mR
Package/Case TO-247
Current Rating 120A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 600
Input Capacitance 5.2nF
Power Dissipation 312W
Threshold Voltage 4V
Number of Elements 1
Turn-On Delay Time 25ns
Radiation Hardening No
Turn-Off Delay Time 132ns
Reach SVHC Compliant No
Max Power Dissipation 312W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 9mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 110A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 10.5mR
Drain to Source Breakdown Voltage 100V

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