STW13N60M2

Не рекомендуется для новых проектов
STW13N60M2 - Stmicroelectronics
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Краткое описание: 600V 11A N-CH MOSFET TO-247 380mR
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

N-channel Power MOSFET, 600V drain-source breakdown voltage, 11A continuous drain current, and 380mΩ maximum drain-source resistance. Features include a 110W maximum power dissipation, 9.5ns fall time, 11ns turn-on delay, and 41ns turn-off delay. This through-hole component is housed in a TO-247 package and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 5.75mm
Height 20.15mm
Length 15.75mm
Series MDmesh™ II Plus
Weight 1.340411oz
Polarity N-CHANNEL
Fall Time 9.5ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 380mR
Package/Case TO-247
RoHS Compliant Yes
Package Quantity 30
Input Capacitance 580pF
Power Dissipation 110W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 11ns
Turn-Off Delay Time 41ns
Max Power Dissipation 110W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 380mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 11A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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