STW13NK60Z

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STW13NK60Z - Stmicroelectronics
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Краткое описание: 600V 13A N-CH Power MOSFET TO-247
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMesh™ Power MOSFET featuring a 600V drain-source breakdown voltage and 13A continuous drain current. This through-hole component offers a low 550mΩ maximum drain-source on-resistance and 150W power dissipation. Housed in a TO-247 package, it exhibits a 12ns fall time and 22ns turn-on delay time, with a 3.75V threshold voltage. Operating temperature range spans from -55°C to 150°C, and the device is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 12ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 550mR
Package/Case TO-247
Current Rating 13A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 30
Input Capacitance 2.03nF
Power Dissipation 150W
Threshold Voltage 3.75V
Number of Elements 1
Turn-On Delay Time 22ns
Radiation Hardening No
Turn-Off Delay Time 61ns
Reach SVHC Compliant No
Max Power Dissipation 150W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 550mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 13A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 550mR
Drain to Source Breakdown Voltage 600V