STW18NK60Z

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STW18NK60Z - Stmicroelectronics
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Краткое описание: 600V 16A N-CH MOSFET, 0.36ohm, TO-247 Power Transistor
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 16A continuous drain current. This through-hole component offers a low 360mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 230W. Designed for demanding applications, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-247-3 configuration. Key switching parameters include a 34ns turn-on delay and 47ns fall time.
RoHS Compliant
Mount Through Hole
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 47ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 360mR
Package/Case TO-247-3
Current Rating 16A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 600
Input Capacitance 3.54nF
Power Dissipation 230W
Turn-On Delay Time 34ns
Radiation Hardening No
Turn-Off Delay Time 82ns
Max Power Dissipation 230W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 360mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 16A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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