STW19NM65N

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STW19NM65N - Stmicroelectronics
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Краткое описание: 650V 15.5A N-CH Power MOSFET TO-247 270mR
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 650V drain-source breakdown voltage and 15.5A continuous drain current. This through-hole component offers a low 270mΩ drain-source on-resistance. Operating across a wide temperature range of -55°C to 150°C, it supports a maximum power dissipation of 150W. The TO-247-3 package is RoHS compliant, with typical turn-on delay of 25ns and fall time of 26ns.
RoHS Compliant
Mount Through Hole
Series MDmesh™ II
Polarity N-CHANNEL
Fall Time 26ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 270mR
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 600
Input Capacitance 1.9nF
Power Dissipation 150W
Turn-On Delay Time 25ns
Radiation Hardening No
Turn-Off Delay Time 80ns
Max Power Dissipation 150W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 270mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 15.5A
Drain to Source Voltage (Vdss) 650V
Drain-source On Resistance-Max 270mR
Drain to Source Breakdown Voltage 650V

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