STW20NM50FD
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Краткое описание:
500V 20A N-CH MOSFET TO-247 FDmesh™ Power
Дополнительная информация
N-Channel 500V POWER MOSFET featuring FDmesh™ technology and an integrated FAST DIODE. This through-hole component offers a maximum continuous drain current of 20A and a low drain-source on-resistance of 250mR. Designed for high-power applications, it boasts a maximum power dissipation of 214W and operates within a temperature range of -65°C to 150°C. Key switching characteristics include a typical fall time of 15ns and a turn-on delay time of 22ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | FDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 250mR |
| Package/Case | TO-247 |
| Current Rating | 20A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 30 |
| Input Capacitance | 1.38nF |
| Power Dissipation | 214W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 214W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 250mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 250mR |
| Drain to Source Breakdown Voltage | 500V |
