STW23NM50N

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STW23NM50N - Stmicroelectronics
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Краткое описание: 500V 17A N-Ch MOSFET TO-247 190mR
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

N-channel Power MOSFET featuring 500V drain-source voltage and 17A continuous drain current. Offers a low 190mΩ maximum drain-source on-resistance. Designed with a TO-247 package for through-hole mounting, this component boasts fast switching characteristics with a 6.6ns turn-on delay and 29ns fall time. Maximum power dissipation is 125W, operating within a temperature range of -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series MDmesh™ II
Fall Time 29ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 190mR
Package/Case TO-247
RoHS Compliant Yes
Input Capacitance 1.33nF
Threshold Voltage 3V
Turn-On Delay Time 6.6ns
Radiation Hardening No
Turn-Off Delay Time 71ns
Reach SVHC Compliant No
Max Power Dissipation 125W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 17A
Drain to Source Voltage (Vdss) 500V
Drain-source On Resistance-Max 190mR

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