STW26NM50

Не рекомендуется для новых проектов
STW26NM50 - Stmicroelectronics
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Краткое описание: 500V 30A N-CH MOSFET TO-247 120mR MDmesh
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 120mΩ maximum drain-source on-resistance. This through-hole component offers a continuous drain current of 30A and a maximum power dissipation of 313W. It operates within a temperature range of -55°C to 150°C and is housed in a TO-247 package. Key switching characteristics include a 19ns fall time and 13ns turn-off delay time. RoHS compliant and Zener-protected.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series MDmesh™
Polarity N-CHANNEL
Fall Time 19ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 120mR
Package/Case TO-247
Current Rating 30A
RoHS Compliant Yes
DC Rated Voltage 500V
Package Quantity 30
Input Capacitance 3nF
Power Dissipation 313W
Threshold Voltage 4V
Number of Elements 1
Turn-On Delay Time 28ns
Radiation Hardening No
Turn-Off Delay Time 13ns
Reach SVHC Compliant No
Max Power Dissipation 313W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 120mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 30A
Drain to Source Voltage (Vdss) 500V
Drain-source On Resistance-Max 120mR
Drain to Source Breakdown Voltage 500V

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