STW26NM60

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STW26NM60 - Stmicroelectronics
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Краткое описание: 600V 30A N-CH MOSFET TO-247 135mR Power Transistor
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 600V drain-source breakdown voltage and a 30A continuous drain current. Offers a low 135mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this component boasts a maximum power dissipation of 313W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 20ns fall time and 14ns turn-off delay time.
RoHS Compliant
Mount Through Hole
Series MDmesh™
Polarity N-CHANNEL
Fall Time 20ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 135mR
Package/Case TO-247-3
Current Rating 30A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 30
Input Capacitance 2.9nF
Power Dissipation 313W
Turn-Off Delay Time 14ns
Max Power Dissipation 313W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 135mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 30A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 135mR
Drain to Source Breakdown Voltage 600V

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