STW28N60M2

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STW28N60M2 - Stmicroelectronics
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Краткое описание: 600V 24A N-CH MOSFET TO-247 Power Transistor
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET, 600V Drain to Source Breakdown Voltage, 22A Continuous Drain Current, and 0.135 Ohm typical Drain to Source Resistance. Features include a 150°C maximum operating temperature, 170W maximum power dissipation, and a TO-247 through-hole package. This component offers fast switching characteristics with a 8ns fall time and 14.5ns turn-on delay time. It is RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series MDmesh™ II Plus
Weight 1.340411oz
Polarity N-CHANNEL
Fall Time 8ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 150mR
Package/Case TO-247
RoHS Compliant Yes
Package Quantity 30
Input Capacitance 1.37nF
Power Dissipation 170W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 14.5ns
Turn-Off Delay Time 100ns
Max Power Dissipation 170W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 120mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 24A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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