STW28NM60ND

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STW28NM60ND - Stmicroelectronics
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Краткое описание: 600V 23A N-CH MOSFET TO-247, 150mR RdsOn
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (END OF LIFE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source voltage and 23A continuous drain current. This component offers a low 0.120 Ohm typical drain-source resistance and a fast switching capability with a 27ns fall time. Encased in a TO-247 package for through-hole mounting, it operates across a wide temperature range from -55°C to 150°C and supports a maximum power dissipation of 190W. The device is RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series FDmesh™ II
Weight 1.340411oz
Polarity N-CHANNEL
Fall Time 27ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 150mR
Package/Case TO-247
RoHS Compliant Yes
Package Quantity 30
Input Capacitance 2.09nF
Power Dissipation 19W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 23.5ns
Radiation Hardening No
Turn-Off Delay Time 92ns
Max Power Dissipation 190W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 150mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 23A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 650V

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