STW29NK50Z
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Краткое описание:
500V 31A N-CH MOSFET TO-247 130mR Power Transistor
Дополнительная информация
N-channel power MOSFET featuring 500V drain-source breakdown voltage and 31A continuous drain current. This through-hole component offers a low 130mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 350W. Designed for demanding applications, it operates within a temperature range of -55°C to 150°C and is housed in a TO-247 package. Key switching characteristics include a 44.5ns turn-on delay and a 33ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 33ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 130mR |
| Package/Case | TO-247 |
| Current Rating | 31A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 600 |
| Input Capacitance | 6.11nF |
| Power Dissipation | 350W |
| Turn-On Delay Time | 44.5ns |
| Turn-Off Delay Time | 129ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 350W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 130mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 31A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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