STW30NM50N
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Краткое описание:
500V 27A N-CH MOSFET, 115mR RdsOn, TO-247 Power Transistor
Дополнительная информация
N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 27A continuous drain current. Offers a maximum drain-source on-resistance of 115mΩ at 10Vgs. Designed for through-hole mounting in a TO-247 package, this component boasts a maximum power dissipation of 190W and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 3V threshold voltage and a 60ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 60ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 115mR |
| Package/Case | TO-247 |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Input Capacitance | 2.74nF |
| Power Dissipation | 190W |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 115ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 190W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 90mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 115mR |
| Drain to Source Breakdown Voltage | 500V |
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