STW35N65M5
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Краткое описание:
650V 27A N-CH MOSFET TO-247 85mR Rds(on)
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 27A continuous drain current. Offers low 85mΩ typical drain-source on-resistance and a maximum of 98mΩ. Designed for through-hole mounting in a TO-247 package, this component operates within a -55°C to 150°C temperature range and supports a maximum power dissipation of 160W. Key switching characteristics include a 16ns fall time, 60ns turn-on delay, and 60ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 98mR |
| Package/Case | TO-247 |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Input Capacitance | 3.75nF |
| Power Dissipation | 160W |
| Number of Elements | 1 |
| Turn-On Delay Time | 60ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Max Power Dissipation | 160W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 85mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 98MR |
| Drain to Source Breakdown Voltage | 650V |
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