STW43NM60ND

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STW43NM60ND - Stmicroelectronics
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Краткое описание: 600V N-Channel MOSFET, 35A, 88mR RdsOn, TO-247
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 35A continuous drain current. This component offers a low 0.075 Ohm typical drain-source on-resistance and is housed in a TO-247 package for through-hole mounting. Key specifications include a 4V threshold voltage, 255W maximum power dissipation, and fast switching characteristics with a 50ns fall time. Designed with a fast diode, this RoHS compliant device operates within a temperature range of -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series FDmesh™
Polarity N-CHANNEL
Fall Time 50ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 88mR
Package/Case TO-247
RoHS Compliant Yes
Input Capacitance 4.3nF
Power Dissipation 255W
Threshold Voltage 4V
Turn-On Delay Time 30ns
Radiation Hardening No
Turn-Off Delay Time 120ns
Reach SVHC Compliant No
Max Power Dissipation 255W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 88mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 35A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 88mR
Drain to Source Breakdown Voltage 600V

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