STW60N65M5
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Краткое описание:
650V 46A 59mR N-CH Power MOSFET TO-247
Дополнительная информация
N-channel power MOSFET featuring 650V drain-source breakdown voltage and 46A continuous drain current. Offers a low 59mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, this RoHS compliant component boasts a maximum power dissipation of 255W and operates across a wide temperature range of -55°C to 150°C. Key switching characteristics include a 16ns fall time and 90ns turn-on delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 59mR |
| Package/Case | TO-247 |
| RoHS Compliant | Yes |
| Input Capacitance | 6.81nF |
| Power Dissipation | 255W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 90ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 255W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 59mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 46A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 59MR |
| Drain to Source Breakdown Voltage | 650V |
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