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Краткое описание:
900V N-CH MOSFET, 5.8A, 2 Ohm, TO-247 Power Transistor
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 900V drain-source breakdown voltage and 5.8A continuous drain current. This through-hole component offers a low 1.56 Ohm typical drain-source on-resistance and 140W maximum power dissipation. Encased in a TO-247 package, it operates within a -55°C to 150°C temperature range and includes fast switching characteristics with a 20ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 2R |
| Package/Case | TO-247 |
| Current Rating | 5.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 900V |
| Package Quantity | 30 |
| Input Capacitance | 1.35nF |
| Power Dissipation | 140W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 140W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 2R |
| Drain to Source Breakdown Voltage | 900V |
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