PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 100V collector-emitter breakdown voltage and a maximum collector current of 2A. Offers a minimum hFE of 500 and a maximum power dissipation of 1.2W. Packaged in a TO-92 case, this RoHS compliant component operates within a temperature range of -65°C to 150°C.
| RoHS |
Compliant |
| Mount |
Through Hole |
| Width |
3.8mm |
| Height |
4.5mm |
| Length |
4.8mm |
| hFE Min |
500 |
| Polarity |
PNP |
| Packaging |
Ammo Pack |
| Package/Case |
TO-92 |
| RoHS Compliant |
Yes |
| Package Quantity |
2000 |
| Power Dissipation |
800mW |
| Number of Elements |
1 |
| Radiation Hardening |
No |
| Reach SVHC Compliant |
No |
| Max Collector Current |
2A |
| Max Power Dissipation |
1.2W |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-65°C |
| Emitter Base Voltage (VEBO) |
5V |
| Collector Base Voltage (VCBO) |
100V |
| Collector-emitter Voltage-Max |
2.5V |
| Collector Emitter Voltage (VCEO) |
100V |
| Collector Emitter Breakdown Voltage |
100V |
| Collector Emitter Saturation Voltage |
2.5V |