PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 3A continuous collector current and 30V collector-emitter breakdown voltage. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 100MHz. Packaged in a RoHS compliant TO-92 through-hole mount configuration.
| RoHS |
Compliant |
| Mount |
Through Hole |
| Width |
3.94mm |
| Height |
4.95mm |
| Length |
4.95mm |
| hFE Min |
300 |
| Polarity |
NPN, PNP |
| Lead Free |
Lead Free |
| Packaging |
Bulk |
| Package/Case |
TO-92 |
| Max Frequency |
100MHz |
| RoHS Compliant |
Yes |
| Package Quantity |
2500 |
| Transition Frequency |
100MHz |
| Max Collector Current |
3A |
| Max Power Dissipation |
900mW |
| Gain Bandwidth Product |
100MHz |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-65°C |
| Emitter Base Voltage (VEBO) |
5V |
| Collector Base Voltage (VCBO) |
40V |
| Collector-emitter Voltage-Max |
700mV |
| Continuous Drain Current (ID) |
3A |
| Collector Emitter Breakdown Voltage |
30V |
| Collector Emitter Saturation Voltage |
700mV |