STY60NM50
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Краткое описание:
500V 60A N-Channel MOSFET TO-247 50mR Power Transistor
Дополнительная информация
N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 60A continuous drain current. Offers a low 50mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247-3 package, this component boasts a 560W maximum power dissipation and operates within a -65°C to 150°C temperature range. Includes Zener protection and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 46ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 50mR |
| Package/Case | TO-247-3 |
| Current Rating | 60A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 30 |
| Input Capacitance | 7.5nF |
| Power Dissipation | 560W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 51ns |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 560W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 50mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 50mR |
| Drain to Source Breakdown Voltage | 500V |
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