SUD19P06-60L-E3
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Краткое описание:
P-Channel MOSFET, 30V, 19A, 60mΩ, TO-252
Дополнительная информация
P-channel power MOSFET featuring 60V drain-source voltage and 19A continuous drain current. Offers low 60mΩ drain-source on-resistance. Surface mountable in a TO-252 package, this silicon Metal-oxide Semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 2.1W. Includes 2.7nF input capacitance and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.7mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.7nF |
| Power Dissipation | 2.7W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 65ns |
| Max Power Dissipation | 2.1W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 60mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 60mR |
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