SUD23N06-31L-E3
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Краткое описание:
N-Channel MOSFET, 60V, 23A, 31mR Rds(on), DPAK
Дополнительная информация
N-channel power MOSFET, surface mountable in a DPAK package. Features 60V drain-source breakdown voltage and 23A continuous drain current. Offers a maximum drain-source on-resistance of 31mΩ at a nominal gate-source voltage of 2V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 100W. This RoHS compliant component boasts fast switching speeds with turn-on delay time of 8ns and fall time of 25ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.38mm |
| Length | 6.73mm |
| Series | TrenchFET® |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rds On Max | 31mR |
| Nominal Vgs | 2V |
| Termination | SMD/SMT |
| Package/Case | DPAK |
| Polarization | N |
| RoHS Compliant | Yes |
| Input Capacitance | 670pF |
| Power Dissipation | 3W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Dual Supply Voltage | 60V |
| On-State Resistance | 45mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 100W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 69mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 31mR |
| Drain to Source Breakdown Voltage | 60V |
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