SUD40N04-10A-E3
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Краткое описание:
40V 40A N-CH MOSFET, 10mR Rds On, DPAK Power FET
Дополнительная информация
N-channel power MOSFET featuring 40V drain-source breakdown voltage and 40A continuous drain current. Offers a low 10mΩ maximum drain-source on-resistance. This component is designed for general-purpose power applications, packaged in a DPAK (TO-252) surface-mount or through-hole compatible package. Key electrical characteristics include 1.7nF input capacitance and 71W maximum power dissipation, with operating temperatures ranging from -55°C to 175°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole, Surface Mount |
| Width | 0.245inch |
| Height | 0.094inch |
| Length | 0.264inch |
| Polarity | N-CHANNEL |
| Fall Time | 14ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 10mR |
| Package/Case | DPAK |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 1.7nF |
| Power Dissipation | 71W |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Max Power Dissipation | 71W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 10mR |
| Drain to Source Breakdown Voltage | 40V |
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