SUD42N03-3M9P-GE3

Снят с производства
SUD42N03-3M9P-GE3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 30V 42A 3.9mR TO-252 SMD
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET, 30V drain-source voltage, 42A continuous drain current, and 3.9mΩ maximum drain-source resistance. Features a 1V threshold voltage, 3.535nF input capacitance, and 73.5W maximum power dissipation. Packaged in a TO-252 surface-mount case, this RoHS compliant component operates from -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Weight 0.050717oz
Polarity N-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 3.9mR
Package/Case TO-252
RoHS Compliant Yes
Package Quantity 2000
Input Capacitance 3.535nF
Threshold Voltage 1V
Number of Channels 1
Turn-On Delay Time 11ns
Radiation Hardening No
Turn-Off Delay Time 35ns
Reach SVHC Compliant No
Max Power Dissipation 73.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.2mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 42A
Drain to Source Voltage (Vdss) 30V

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