SUD45P03-09-GE3

Снят с производства
SUD45P03-09-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 30V 45A DPAK SMT
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel Power MOSFET, single element, enhancement mode, featuring 30V drain-source voltage and 45A continuous drain current. Surface-mount DPAK package (TO-252AA) with gull-wing leads, measuring 6.73mm max length and 6.22mm max width. Offers 8.7mOhm max drain-source resistance at 10V Vgs and 2100mW power dissipation. Operates from -55°C to 150°C.
PCB 2
Tab Tab
ECCN EAR99
PPAP No
Jedec TO-252AA
EU RoHS Yes with Exemption
Category Power MOSFET
HTS Code 8541290095
Mounting Surface Mount
Cage Code 18612
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type P
Package/Case DPAK
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.28
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.3
Package Width (mm) 6.22(Max)
Package Description Deca Watt Package
Package Family Name TO-252
Package Height (mm) 2.38(Max)
Package Length (mm) 6.73(Max)
Radiation Hardening No
Seated Plane Height (mm) 2.51(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 2100mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 60nC
Typical Gate Charge @ Vgs 60@10VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 8.7@10VmOhm
Typical Input Capacitance @ Vds 2700@15VpF
Maximum Continuous Drain Current 45A

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