SUD50N02-06P-E3
Снят с производства
Увеличить
Краткое описание:
N-CH MOSFET, 20V, 30A, 6mR Rds(on), TO-263
Дополнительная информация
N-channel power MOSFET featuring 20V drain-source voltage and 30A continuous drain current. This surface-mount component offers a low 6mΩ on-state resistance and a maximum power dissipation of 65W. Designed for general-purpose power applications, it operates within a temperature range of -55°C to 175°C and is packaged in a TO-263-3 case. Key switching characteristics include a 9ns fall time and 11ns turn-on delay time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 2.55nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 11ns |
| Dual Supply Voltage | 20V |
| On-State Resistance | 6mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 24ns |
| Max Power Dissipation | 65W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 6mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
