SUD50N03-06P-E3
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Краткое описание:
N-Channel MOSFET, 30V, 84A, 6.5mR Rds(on), DPAK
Дополнительная информация
N-channel power MOSFET featuring 30V drain-source breakdown voltage and 84A continuous drain current. Offers a low 6.5mΩ maximum drain-source on-resistance at a nominal 3V gate-source voltage. Designed for surface mounting in a DPAK package, this RoHS compliant component boasts a maximum power dissipation of 88W and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 12ns turn-on delay and 10ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.245inch |
| Height | 0.094inch |
| Length | 0.264inch |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6.5mR |
| Nominal Vgs | 3V |
| Package/Case | DPAK |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 3.1nF |
| Power Dissipation | 8.3W |
| Turn-On Delay Time | 12ns |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 88W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 84A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6.5MR |
| Drain to Source Breakdown Voltage | 30V |
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