SUD50N04-16P-E3
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Краткое описание:
40V N-Channel MOSFET, 20A ID, 16mR Rds On, TO-252
Дополнительная информация
N-Channel Power MOSFET, 40V Drain-Source Voltage, 20A Continuous Drain Current, and 16mΩ Drain-Source Resistance. This silicon, metal-oxide semiconductor FET features a TO-252 package for surface mounting, with a maximum power dissipation of 35.7W and an operating temperature range of -55°C to 175°C. Key electrical characteristics include a 16V Gate-Source Voltage, 1.655nF input capacitance, and switching times of 19ns (turn-on delay), 36ns (fall time), and 40ns (turn-off delay). The component is RoHS compliant and supplied in tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 36ns |
| Packaging | Tape and Reel |
| Rds On Max | 16mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 1.655nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 19ns |
| Turn-Off Delay Time | 40ns |
| Max Power Dissipation | 35.7W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 16mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 40V |
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