SUD50N06-08H-E3
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Краткое описание:
60V 93A N-CH MOSFET, 7.8mR Rds On, DPAK, Power
Дополнительная информация
N-channel power MOSFET with 60V drain-source breakdown voltage and 7.8mΩ Rds(on) at 10V gate-source voltage. Features a continuous drain current of 93A and a maximum power dissipation of 136W. This surface-mount device is housed in a DPAK package, suitable for high-power applications. It offers fast switching speeds with turn-on delay time of 28ns and fall time of 10ns. Operating temperature range is -55°C to 175°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.245inch |
| Height | 0.094inch |
| Length | 0.264inch |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 7.8mR |
| Package/Case | DPAK |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 7nF |
| Power Dissipation | 136W |
| Turn-On Delay Time | 28ns |
| Turn-Off Delay Time | 50ns |
| Max Power Dissipation | 136W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 93A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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