SUD50N06-09L-E3
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Краткое описание:
60V 50A N-Channel Power MOSFET, 9.3mR Rds(on), TO-252
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source voltage and 50A continuous drain current. This surface-mount component offers a low 9.3mΩ maximum drain-source on-resistance. Designed for general-purpose power applications, it operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 136W. The TO-252-3 package is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9.3mR |
| Nominal Vgs | 2V |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 2.65nF |
| Power Dissipation | 8.3W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 136W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 9.3mR |
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