SUD50N10-18P-E3
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Краткое описание:
N-CH MOSFET 100V 50A 18.5mR TO-252
Дополнительная информация
N-channel MOSFET, surface mount, TO-252-3 package. Features 100V drain-source breakdown voltage, 50A continuous drain current, and 18.5mΩ maximum drain-source on-resistance. Operates with a 20V gate-source voltage and offers a maximum power dissipation of 136.4W. Includes fast switching characteristics with 12ns turn-on delay and 8ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 18.5mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 2.6nF |
| Power Dissipation | 136.4W |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Max Power Dissipation | 136.4W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 18.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 18.5MR |
| Drain to Source Breakdown Voltage | 100V |
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